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RH1009 2.5V Reference DESCRIPTIO ABSOLUTE AXI U RATI GS The RH1009 is a general purpose 2.5V shunt regulator diode designed to operate over a wide current range while maintaining good stability with time and temperature. The adjust terminal allows either temperature coefficient to be minimized or the reference voltage to be adjusted without changing the temperature coefficient. Because it operates as a shunt regulator it can be used equally well as a positive or negative reference. The wafer lots are processed to Linear Technology's inhouse Class S flow to yield circuits usable in stringent military applications. Reverse Breakdown Current ................................ 20mA Forward Current................................................... 10mA Operating Temperature Range ............. - 55C to 125C Storage Temperature Range ................. - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C , LTC and LT are registered trademarks of Linear Technology Corporation. BUR -I CIRCUIT 20V PACKAGE/ORDER I FOR ATIO BOTTOM VIEW + 2k - ADJ NC RH1009 BI H PACKAGE 3-LEAD TO-46 METAL CAN TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VZ VZ IR rZ VZ VZ Time Reverse Breakdown Voltage Reverse Breakdown Voltage Change with Current Reverse Dynamic Impedance Temperature Stability Long Term Stability TA = 25C 0.1C, IR = 1mA CONDITIONS IR = 1mA 400A IR 10mA IR = 1mA 1 1 NOTES MIN 2.495 (Preirradiation) TJ = 25C TYP MAX 2.505 6 0.6 SUB- - 55C TJ 150C SUBGROUP MIN TYP MAX GROUP 1 1 10 1 15 20 2,3 UNITS V mV mV ppm/kHr Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. U U W WW U W U UU 1 RH1009 TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VZ CONDITIONS 10KRAD(Si) NOTES MIN MAX (Postirradiation) (Note 2) 50KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX 200KRAD(Si) MIN MAX UNITS 20KRAD(Si) MIN MAX Reverse Breakdown Voltage IR = 1mA 2.495 2.505 2.495 6 2.505 2.495 6 0.6 2.505 2.495 8 0.8 2.505 2.495 10 1.0 2.505 12 1.4 V mV VZ IZ rZ Reverse Breakdown Voltage 400A IR 10mA Change with Current Reverse Dynamic Impedance IR = 1mA 1 0.6 Note 1: Guaranteed by design, characterization or correlation to other tested parameters. Note 2: TA = 25C unless otherwise noted. TOTAL DOSE BIAS CIRCUIT 15V 12.4k RH1009 TDBC TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) Group A Test Requirements (Method 5005) Group C and D End Point Electrical Parameters (Method 5005) * PDA Applies to subgroup 1. See PDA Test Notes. SUBGROUP 1*,2,3 1,2,3 1 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TYPICAL PERFORMANCE CHARACTERISTICS Reverse Breakdown Voltage 2.502 REVERSE BREAKDOWN VOLTAGE (V) IR = 1mA 2.501 REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 2.500 2.499 2.498 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1009 G01 2 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507q TELEX: 499-3977 q www.linear-tech.com q UW UW Reverse Breakdown Voltage Change with Current 0 -2 -4 -6 -8 -10 -12 -14 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1009 G02 600A IR 10mA I.D. No. 66-10-0174 Rev. B 0497 LT/HP 0497 500 REV B * PRINTED IN USA (c) LINEAR TECHNOLOGY CORPORATION 1990 |
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